| PART |
Description |
Maker |
| ENA1108A |
RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single MCP
|
ON Semiconductor
|
| 55GN01FA ENA1113A |
RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single SSFP
|
ON Semiconductor
|
| 55GN01MA 55GN01MA-TL-E |
RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP
|
ON Semiconductor
|
| 2SC1473A 2SC1473 2SC1473/2SC1473A 2SC1473Q 2SC1473 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 70MA I(C) | TO-92 晶体管|晶体管|叩| 300V五（巴西）总裁|提供70mA一（c）|92
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 70MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
STMicroelectronics N.V.
Matsshita / Panasonic
|
| 2SA1767 2SA1767Q |
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 70MA I(C) | TO-92
|
Matsshita / Panasonic
|
| SB007T03C |
30V, 70mA Rectifier Schottky Barrier Diode (Series Connection)
30V/ 70mA Rectifier
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| IRG4RC10S IRG4RC10 IRG4RC10STR IRG4RC10STRL IRG4RC |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4BC30W-S IRG4BC30WS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| NDHV310AFBE2 |
30mW; 5V; 70mA blue laser diode
|
NICHIA CORPORATION
|
| FC809 |
30V, 70mA Rectifier Silicon Barrier Diode
|
SANYO
|
